IXYX120N120B3

Overview

The IXYX120N120B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from IXYS, utilizing GenX3™ technology. It features a TO-247-PLUS-3 through-hole package and supports a maximum collector-emitter voltage of 1.2 kV. The device delivers a continuous collector current of 120 A at 25°C, with a peak pulsed current capability of 800 A. Its collector-emitter saturation voltage is specified at 1.8 V, while the gate-emitter voltage range spans from -20 V to +20 V. Power dissipation reaches 1.5 kW, operating within a temperature range of -55°C to +175°C.

Feature Summary

• GenX3™ trench field-stop technology for optimized switching performance
• High short-circuit withstand capability for robust system protection
• Low saturation voltage for reduced conduction losses
• Positive temperature coefficient of Vce(sat) for easy paralleling

Applications

• Induction heating systems
• Uninterruptible power supplies (UPS)
• Motor control drives
• High-frequency welding equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides traceable documentation matching the IXYS part number. Cross-reference the package type and lead finish requirements with your assembly specifications before finalizing orders.

Selection Notes

Select this component when high current handling and low on-state voltage are critical for efficiency in medium-to-high power applications. The TO-247-PLUS-3 package offers superior thermal performance compared to standard TO-247 variants. Evaluate the required short-circuit duration and safe operating area limits to ensure the device meets the specific stress conditions of the target circuit design.

Part Context

This IGBT belongs to the IXYS GenX3™ family, which employs advanced trench gate and field-stop technologies. These devices are engineered for high-power density applications requiring fast switching speeds and low conduction losses. The series is widely recognized for its reliability in industrial power conversion environments where thermal management and electrical robustness are paramount.

Replacement Considerations

Direct replacements include other IXYS GenX3™ devices with identical voltage and current ratings, such as the IXGK120N120B3, provided the package footprint matches. Verify that substitute parts maintain compatible gate charge parameters and thermal resistance values to ensure equivalent circuit performance without redesigning the driver stage.