IXYX120N120C3

Overview

The IXYX120N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the fourth-generation GenX4 trench IGBT family. The device features a TO-247-PLUS-3 package with through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 1200 V, a continuous collector current of 120 A at 25°C, and a saturation voltage of 1.8 V. Power dissipation is rated at 1.5 kW, with an operating temperature range from -55°C to +175°C.

Feature Summary

• Utilizes XPT thin-wafer technology for optimized low conduction losses.
• Fourth-generation GenX4 trench structure supports switching frequencies up to 5 kHz.
• High power density design with low gate drive requirements.

Applications

• Power inverters
• Motor drives
• PFC circuits
• Battery chargers
• Welding machines

Procurement Notes

Verify the specific suffix 'C3' against official IXYS documentation to confirm pinout and thermal characteristics, as suffixes often denote packaging or revision differences. Ensure the procurement channel provides valid traceability documents. Cross-reference the datasheet version to confirm compatibility with system thermal management designs.

Selection Notes

Select this component for applications requiring high voltage blocking capability and moderate current handling in a standard through-hole package. The 1.8 V saturation voltage offers efficiency benefits over higher voltage drop alternatives. Consider the 1.5 kW power dissipation rating when designing heatsinking solutions for continuous operation within the specified temperature limits.

Part Context

This part belongs to the IXYS IXYxN120A4 series, which encompasses various packages and current ratings within the 1200V XPT GenX4 IGBT family. The IXYX120N120C3 specifically represents the 120A variant in the TO-247-PLUS-3 form factor, distinct from lower current models like the 55A or 85A versions available in similar packages.

Replacement Considerations

Direct substitutes may include other IXYS GenX4 IGBTs with matching 1200V/120A ratings and TO-247-PLUS-3 packages. Verify that alternative parts maintain compatible Vce(sat) and gate charge specifications to ensure circuit performance parity without redesigning the gate driver stage.