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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 470A PLUS247
- Series：Gen5 XPT™
- Mfr：IXYS
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：470 A
- Current - Collector Pulsed (Icm)：1.13 kA
- Vce(on) (Max) @ Vge, Ic：1.45V @ 15V, 100A
- Power - Max：1.61 kW
- Switching Energy：600µJ (on), 3.4mJ (off)
- Input Type：Standard
- Gate Charge：790 nC
- Td (on/off) @ 25°C：77ns/470ns
- Test Condition：300V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXYX200N65B5 is a single N-channel silicon IGBT from IXYS, utilizing XPT Gen5 technology and Trench process. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC110) of 200 A at TC=110°C. The saturation voltage (VCE(sat)) is typically 1.45 V at IC=100A, VGE=15V. Operating within a junction temperature range of -55°C to 175°C, it offers a maximum power dissipation of 1610 W at TC=25°C. The device is housed in a PLUS-247-3L through-hole package with a thermal resistance (RthJC) of 0.093 °C/W.
Feature Summary
- Optimized for medium switching applications between 5–30 kHz
- Features positive thermal coefficient of VCE(sat)
- Provides square Reverse Biased Safe Operating Area (RBSOA)
- Utilizes proprietary XPT thin-wafer technology for reduced thermal resistance
Applications
- Power Inverters
- Motor Drives
- Uninterruptible Power Supplies (UPS)
- Switching Mode Power Supplies (SMPS)
Procurement Notes
Verify the manufacturer part number against Littelfuse or IXYS official documentation to confirm authenticity. Ensure the component matches the specified PLUS-247-3L package outline dimensions. Check datasheet revisions for any updates to electrical characteristics before finalizing procurement specifications.
Selection Notes
Select this component for high-power density designs requiring optimized performance in the 5–30 kHz frequency range. Consider the 1.45 V typical VCE(sat) and low gate charge when designing drive circuits. Evaluate the 0.093 °C/W thermal resistance for heat sink requirements to maintain junction temperatures within the 175°C maximum limit.
Part Context
This device belongs to the IXYS Gen5 XPT IGBT family, designed for high-efficiency power conversion. It integrates advanced trench gate technology with soft-punch-through structures to balance conduction losses and switching performance. The PLUS-247-3L package provides robust mechanical stability and efficient thermal management for industrial power electronics.
Replacement Considerations
Check for direct replacements within the IXYS/IXXX series such as IXXX200N65B4, ensuring pinout compatibility and similar electrical ratings like VCES and IC110. Verify that alternative devices meet the same RBSOA and thermal resistance specifications for the target application.
