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The IXYX25N250CV1HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and features the HV XPT (High Voltage Punch-Through) design for optimized high-voltage performance. The device is housed in a TO-247-PLUS-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 2.5 kV and a continuous collector current (Ic) of 95 A at 25°C. The saturation voltage (VCE(sat)) is specified at 3.4 V, with a maximum power dissipation (Pd) of 937 W. It operates within a temperature range of -55°C to +175°C.
Verify the exact suffix against the manufacturer's official datasheet to confirm pinout compatibility and specific thermal characteristics. Ensure that the ordering documentation explicitly references the IXYX25N250CV1HV part number to avoid confusion with similar variants in the IXYS portfolio. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement.
Select this component when designing circuits requiring a 2.5 kV blocking voltage and high current handling capability up to 95 A. The TO-247-PLUS-3 package is suitable for applications needing robust mechanical stability and effective heat sinking. Consider the 3.4 V saturation voltage for efficiency calculations in high-power conversion stages.
This device belongs to IXYS' High Voltage XPT IGBT series, which is engineered for demanding power electronics applications. The series offers a combination of high voltage tolerance and efficient switching performance, making it a standard choice for industrial power conversion systems where reliability under high stress conditions is critical.
Direct substitutes may include other 2.5 kV, 95 A IGBTs in the TO-247-PLUS-3 package from IXYS or other manufacturers, provided they meet the same VCE(sat) and thermal dissipation requirements. Verify gate charge and switching times for circuit compatibility.