IXYY8N90C3

Overview

The IXYY8N90C3 is a high-voltage N-channel MOSFET manufactured by IXYS, designed for demanding power switching applications. It features an 8-ampere continuous drain current and a 900-volt breakdown voltage capability. The device utilizes IXYS's CoolMOS C3 technology, which optimizes the trade-off between on-state resistance and gate charge. Key electrical parameters include a maximum drain-source voltage of 900V, a typical on-resistance of approximately 1.5 ohms at room temperature, and a total gate charge of around 20 nanocoulombs. These specifications support efficient operation in hard-switching environments while minimizing conduction and switching losses.

Feature Summary

• Utilizes CoolMOS C3 technology to achieve superior performance in hard-switching applications compared to standard planar MOSFETs.
• Optimized gate charge characteristics facilitate faster switching speeds and reduced dynamic power losses.
• Enhanced ruggedness provided by low internal inductance and robust package design suitable for high-power density systems.

Applications

• High-frequency switch-mode power supplies (SMPS)
• Uninterruptible power supply (UPS) inverters
• Motor control drives

Procurement Notes

Verify the specific ordering suffix and tape-and-reel or tube packaging details directly with authorized distributors or the manufacturer before placing orders. Ensure that the component lot date codes meet project requirements and confirm compliance with relevant RoHS directives applicable to your region.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities combined with moderate current handling in hard-switching topologies. Evaluate thermal management needs based on the specified RthJA and ensure the gate drive voltage aligns with the device's threshold and plateau characteristics for optimal efficiency.

Part Context

This part belongs to IXYS's CoolMOS family, specifically leveraging the third-generation C3 process improvements. It serves as a direct upgrade path for legacy silicon MOSFETs in high-voltage consumer and industrial power electronics, offering lower figure-of-merit values for improved system efficiency.

Replacement Considerations

Direct replacements may include other IXYS CoolMOS C3 variants with similar voltage and current ratings, such as the IXYY6N90C3 or IXYY10N90C3, depending on specific current requirements. Always verify pinout compatibility and thermal resistance specifications before substituting.