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Product Detailed Parameters
- Description：JFET N-CH 25V TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：80 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：8 Ohms
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The J108_D26Z is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a TO-92-3 package with kinked leads for through-hole mounting. The device operates within a junction temperature range of -55°C to +150°C and features a maximum power dissipation of 625 mW at 25°C ambient temperature. Key electrical characteristics include a gate-source breakdown voltage of -25 V, a drain-source cutoff voltage of -2 V, and a typical on-resistance of 12 Ohms. The component is designed for small-signal switching applications.
Feature Summary
- N-channel silicon JFET technology for signal switching
- Through-hole TO-92-3 package with kinked leads
- Wide operating junction temperature range
Applications
- Small-signal electronic switching circuits
- Analog signal path control
- Low-noise amplifier input stages
Procurement Notes
Verify the specific suffix D26Z against the manufacturer's current datasheet to confirm packaging format and tape-and-reel specifications. Ensure the procurement documentation matches the exact part number J108_D26Z to avoid confusion with similar J1xx series variants that may have different electrical tolerances or pin configurations.
Selection Notes
Select this component when an N-channel depletion-mode JFET is required for low-voltage switching applications. Compare the 12 Ohm on-resistance and -25 V gate-source breakdown voltage against circuit requirements. Consider the TO-92-3 package constraints for thermal management and board space relative to alternative SMD packages if higher current handling is needed.
Part Context
The J108 belongs to the J1xx series of N-channel JFETs produced by onsemi. These devices are commonly used in legacy and modern analog designs requiring simple, robust switching elements. The D26Z suffix typically denotes specific packaging and shipping configuration details defined by the manufacturer.
Replacement Considerations
Direct replacements should be sought from the J1xx series, such as the J107 or J109, provided their electrical parameters align with the design constraints. Verify pinout compatibility and ensure the substitute device meets the same -25 V gate-source breakdown voltage requirement.
