SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The J110,126 is an N-channel symmetrical silicon junction field-effect transistor (JFET) manufactured by NXP USA Inc. It is housed in a TO-92 through-hole package. The device features a breakdown voltage of 25 V and a maximum power dissipation of 400 mW. It exhibits a cutoff voltage of 4 V at 1 µA gate-source current. These specifications define its operational limits for moderate-voltage applications requiring high-speed switching capabilities.
Verify the specific manufacturer marking on the component body to confirm it matches NXP USA Inc. documentation. Ensure the package type is confirmed as TO-92 with three leads. Cross-reference the part number suffix against official NXP datasheets to validate that no functional variations exist compared to the standard J110 specification.
Select this component when a symmetrical N-channel JFET is required for moderate voltage levels up to 25 V. Consider the TO-92 package constraints for board space and thermal management. Evaluate the 400 mW power dissipation limit against the expected operating conditions to ensure reliable performance without exceeding thermal ratings.
This component belongs to the family of N-channel silicon junction field-effect transistors. It shares the symmetrical design characteristics common to this series, allowing bidirectional operation in certain configurations. The TO-92 packaging provides a standardized mechanical interface for through-hole mounting techniques used in various electronic assemblies.
Consult official NXP substitution lists for verified equivalents. Generic replacements must match the N-channel configuration, 25 V breakdown voltage, and TO-92 package dimensions to maintain circuit integrity.