J110G

J110G

$0.37
  • Description:JFET N-CH 25V TO92
  • Series:-

SKU:14e0ef05df20 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 25V TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):25 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):10 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:500 mV @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):18 Ohms
  • Power - Max:310 mW
  • Operating Temperature:135°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

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J110G

Overview

The J110G is an N-channel silicon small-signal Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes a TO-92 three-lead plastic package designed for general-purpose amplification and switching applications. The device operates in depletion mode with a maximum drain-source voltage rating of 50 V and a continuous drain current capability of 100 mA. Key electrical characteristics include a minimum gate cutoff voltage (V_GS(off)) of -0.5 V and a maximum value of -6 V, ensuring predictable biasing across production lots. The component supports a maximum power dissipation of 310 mW at 25°C ambient temperature and functions within a junction temperature range of -55°C to +150°C.

Feature Summary

  • N-channel enhancement/depletion mode operation suitable for analog signal processing
  • High input impedance characteristic inherent to junction field-effect technology
  • Robust thermal performance with extended operating temperature range up to 150°C
  • Standardized TO-92 surface-mount compatible leaded package for compact integration

Applications

  • Low-noise preamplifier stages in audio equipment
  • Analog switch circuits requiring high isolation
  • Constant current source regulation in sensor interfaces

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout orientation and electrical tolerances. Ensure that the procurement channel provides traceable documentation confirming RoHS compliance status. Cross-reference the part number with the latest onsemi product change notices to validate manufacturing origin and material composition before finalizing supply agreements.

Selection Notes

Select this component when designing circuits requiring moderate voltage handling with low leakage current characteristics. Evaluate the gate cutoff voltage spread (-0.5 V to -6 V) to determine if external biasing networks are necessary for consistent performance. Compare the 100 mA drain current limit against peak load requirements to ensure adequate safety margins during transient conditions.

Part Context

The J110G belongs to the standard discrete JFET family utilized in linear electronics design. It serves as a direct replacement for legacy N-channel JFETs in established amplifier topologies. The device maintains compatibility with common through-hole mounting techniques while offering reliable performance in consumer and industrial control systems requiring stable field-effect transistor behavior.

Replacement Considerations

Publicly confirmed substitute part numbers include the 2N5457, J111, and J112. When substituting, verify that the alternative device matches the required gate cutoff voltage polarity and magnitude. Confirm that the replacement package maintains identical pin configuration to prevent PCB footprint modifications.

J110GJ110G
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