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The onsemi J112RL1G is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for chopper applications. It operates within a drain-gate voltage range of -35 Vdc and a gate-source voltage limit of -35 Vdc, with a maximum total device dissipation of 350 mW at 25°C. The component features a zero-gate-voltage drain current (IDSS) ranging from 2.0 mA to 20 mA and a static drain-source on-resistance (rDS(on)) between 30 Ω and 50 Ω. Packaged in a lead-free TO-92 format, it supports an operating junction temperature range of -65°C to +150°C.
Verify the specific ordering suffix RL1G against the official datasheet to confirm tape and reel packaging and Pb-Free status. Ensure the requested quantity aligns with standard shipping units. Confirm that the TO-92 style matches the required pinout configuration for the target circuit design before finalizing the order.
Select this component when low gate leakage and stable switching performance are required for precision analog applications. Consider the IDSS range and rDS(on) specifications to ensure compatibility with the intended signal levels. Verify thermal management requirements as the device dissipates up to 350 mW.
This part belongs to the J11x series of N-channel JFET chopper transistors manufactured by onsemi. It shares the same electrical characteristics and pinout as the J111 variant but differs in specific parameter tolerances. The series is widely used in instrumentation and high-precision signal processing equipment requiring low offset voltages.
Public confirmed substitute part numbers: J111RL1G.