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Product Detailed Parameters
- Description：JFET N-CH 35V TO92
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：50 Ohms
- Power - Max：350 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi J112RLRA is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for chopper transistor applications. It utilizes a TO-92 package with Style 5 pin configuration, where Pin 1 is Drain, Pin 2 is Source, and Pin 3 is Gate. The device supports a maximum drain-gate voltage of -35 Vdc and gate-source voltage of -35 Vdc. Key electrical characteristics include a zero-gate-voltage drain current (IDSS) range of 2.0 mA to 20 mA and a static drain-source on-resistance (rDS(on)) up to 50 Ohms. Total device dissipation is rated at 350 mW at 25°C ambient temperature.
Feature Summary
- N-channel silicon field-effect transistor configured as a depletion mode switch
- Designed specifically for chopper transistor applications
- Source and drain terminals are electrically interchangeable
Applications
- Chopper stabilized amplifiers
- Analog switching circuits
- Sample and hold circuits
Procurement Notes
Verify the specific ordering suffix RLRA corresponds to the Tape & Reel shipping format containing 2000 units per reel. Confirm that the component meets Pb-Free packaging requirements if environmental compliance is mandatory for the assembly process. Ensure the TO-92 Style 5 pinout matches the target PCB footprint design before finalizing procurement orders.
Selection Notes
Select this component when an N-channel JFET switch with low on-resistance and high breakdown voltage is required. The IDSS range of 2.0 mA to 20 mA allows for predictable switching behavior in analog signal paths. Consider the TO-92 package constraints regarding thermal dissipation limits and physical space availability within the enclosure design.
Part Context
This part belongs to the J11x series of N-channel silicon JFETs manufactured by onsemi. It shares functional similarities with the J111 but differs in specific electrical parameters such as drain current and cutoff voltage ranges. The RLRA suffix indicates a specific bulk packaging variant intended for automated surface mount or through-hole insertion processes requiring reel-fed components.
Replacement Considerations
Direct substitutes include the J111RLRA from the same manufacturer family. Verify compatibility with other industry-standard N-channel JFETs by comparing IDSS ranges and rDS(on) specifications against the original circuit requirements.
FAQ
What is the pin configuration for the J112RLRA?
The device uses TO-92 Style 5 pinning: Pin 1 is Drain, Pin 2 is Source, and Pin 3 is Gate.
Is the source and drain interchangeable?
Yes, the source and drain terminals are interchangeable due to the symmetrical structure of the device.
What is the maximum power dissipation rating?
The total device dissipation is rated at 350 mW at an ambient temperature of 25°C, derating by 2.8 mW/°C above this temperature.
