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Product Detailed Parameters
- Description：JFET N-CH 35V TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：100 Ohms
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The J113_D27Z is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for small-signal switching applications and utilizes silicon technology. The device is housed in a TO-92-3 Kinked Lead through-hole package, suitable for standard PCB mounting. Key electrical characteristics include a gate-source breakdown voltage of -35 V and a gate-source cutoff voltage of -5 V. At zero gate-source voltage, the drain-source current is specified at 5 mA, with a maximum drain-source on-resistance of 50 Ohms. The component supports a power dissipation of 625 mW.
Feature Summary
- N-channel depletion mode operation for signal switching
- Integrated kinked lead design for secure through-hole mounting
- Silicon construction for reliable small-signal performance
Applications
- Electronic circuit switching
- Signal processing stages
- Small-signal amplification circuits
Procurement Notes
Verify the specific suffix D27Z against the official onsemi datasheet to confirm exact binning or testing criteria. Ensure the procurement channel provides valid RoHS compliance documentation. Confirm that the TO-92-3 Kinked Lead package matches the mechanical requirements of the target assembly. Cross-reference the manufacturer part number to avoid confusion with similar JFET variants.
Selection Notes
Select this component when an N-channel JFET with low on-resistance and moderate current handling is required for through-hole designs. The TO-92-3 package offers a compact footprint for general-purpose electronics. Consider the 625 mW power dissipation limit during thermal analysis. Verify that the -35 V gate-source breakdown voltage meets the circuit's voltage stress requirements.
Part Context
This device belongs to the J112/J113 series of N-channel JFETs from onsemi. These transistors are commonly used in analog and digital switching applications where low noise and high input impedance are beneficial. The series provides a standardized solution for replacing older discrete JFET designs in consumer and industrial equipment.
Replacement Considerations
Consult the official onsemi datasheet for verified substitute part numbers within the same family. Ensure any replacement maintains the TO-92-3 Kinked Lead package and identical N-channel specifications.
