J175

Description：JFET P-CH 30V TO92-3
Series：-

SKU:3dfdea475edb Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET P-CH 30V TO92-3
Series：-
Mfr：onsemi
Package：Bulk
FET Type：P-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：125 Ohms
Power - Max：350 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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J175

Overview

The onsemi J175 is a P-Channel Junction Field Effect Transistor (JFET) switch designed for low-level analog applications. It operates within a Drain-Gate voltage of -30 V and a Gate-Source voltage of 30 V. The device features a maximum zero-gate voltage drain current (IDSS) of -7.0 mA and a typical drain-source on resistance (rDS(on)) of 125 Ω at VGS = 0. It supports an operating junction temperature range from -55°C to +150°C with a total device dissipation of 350 mW.

Feature Summary

Designed specifically for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers.
Features interchangeable source and drain terminals, simplifying circuit layout and design flexibility.
Provides high gate-source breakdown voltage capability of 30 V for robust signal handling.

Applications

Low-level analog switching
Sample and hold circuits
Chopper stabilized amplifiers

Procurement Notes

Verify the specific package variant required, as the J175 is available in SOT-23 and TO-92 configurations. Confirm that the sourcing channel provides original manufacturer documentation to ensure the component meets the specified electrical characteristics, particularly the IDSS and rDS(on) tolerances defined in the datasheet.

Selection Notes

Select the J175 when designing circuits requiring precise analog signal routing with minimal leakage. Consider the 125 Ω on-resistance for impedance matching requirements. Ensure the application stays within the 350 mW power dissipation limit and utilizes the appropriate thermal derating curves for ambient temperatures exceeding 25°C.

Part Context

The J175 belongs to a family of P-Channel JFET switches that includes the J174, J176, and J177 models. These devices are sourced from Process 88 and share similar structural characteristics but differ in their specific IDSS and rDS(on) ranges to accommodate various analog switching needs.

Replacement Considerations

Direct substitutes include the MMBFJ175 for surface mount implementations or other J-series P-Channel JFETs with comparable IDSS and breakdown voltage ratings. Verify pinout compatibility and thermal performance before substitution.