J175_D27Z

$0.09

Description：JFET P-CH 30V TO92-3
Series：-

SKU:7bdc38963eb3 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET P-CH 30V TO92-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：P-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：125 Ohms
Power - Max：350 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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J175_D27Z

Overview

The J175_D27Z is a P-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for through-hole mounting in the TO-92-3 package. The device features a gate-to-source breakdown voltage of 30 V and a maximum power dissipation of 350 mW. Its drain-source on-resistance is specified at 125 Ohms. This component serves as a discrete semiconductor switch or amplifier element within electronic circuits requiring low-power JFET functionality.

Feature Summary

P-Channel JFET configuration for signal switching applications
Through-hole TO-92-3 package for standard PCB mounting
30 V gate-to-source breakdown voltage rating
350 mW maximum power dissipation capability

Applications

Low-power analog signal switching
Constant current source circuits
Impedance matching networks
Audio pre-amplifier stages

Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified supply chain partners. Confirm that the received units match the J175_D27Z marking and TO-92-3 physical dimensions. Request official RoHS compliance documentation to ensure material safety standards are met. Validate datasheet specifications against the specific manufacturing lot if critical performance thresholds are required for the design.

Selection Notes

Select this part when a P-Channel JFET with a 30 V breakdown voltage and 125 Ohm on-resistance is required. The TO-92-3 through-hole package dictates mechanical integration constraints. Consider the 350 mW power limit for thermal management. Evaluate alternative JFETs only if pinout compatibility or specific electrical parameters differ significantly from these defined values.

Part Context

The J175_D27Z belongs to the discrete JFET product line offered by onsemi. It utilizes silicon technology for reliable operation in analog and digital switching environments. The TO-92-3 form factor provides a compact solution for legacy or space-constrained through-hole designs. This component complements onsemi's broader portfolio of small-signal transistors and diodes.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation. Consult onsemi technical support for direct replacements. Ensure any alternative device matches the P-Channel type, TO-92-3 package, and 30 V breakdown voltage requirements.