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Product Detailed Parameters
- Description：JFET P-CH 30V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：1.5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：300 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi J177 is a P-Channel Silicon Junction Field Effect Transistor (JFET) designed for low-level analog switching applications. It operates within a drain-source voltage range of -30 V and supports a junction temperature up to +150 °C. The device features a zero-gate voltage drain current (IDSS) ranging from -20 mA to -100 mA at VDS = -15 V, with a maximum drain-source on-resistance (rDS(on)) of 300 Ω. It is available in TO-92 and SOT-23 packages.
Feature Summary
- Designed specifically for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers.
- Features interchangeable source and drain terminals, simplifying circuit layout and component placement.
- Constructed using silicon technology sourced from Process 88 for reliable performance.
Applications
- Low-level analog switching
- Sample and hold circuits
- Chopper-stabilized amplifiers
Procurement Notes
Verify the specific package variant required, as the J177 is available in both TO-92 and SOT-23 configurations. Confirm that the IDSS bin matches the design requirements, as the datasheet specifies a wide range from -20 mA to -100 mA. Ensure the sourcing entity is authorized, noting the historical transition from Fairchild Semiconductor to onsemi for this product line.
Selection Notes
Select the J177 when designing precision analog signal paths requiring low leakage and high input impedance. Consider the wide IDSS variation (-20 mA to -100 mA) during circuit simulation to ensure consistent cutoff behavior across different units. Evaluate thermal dissipation limits if operating near the maximum junction temperature of 150 °C.
Part Context
The J177 belongs to a family of P-Channel JFETs that includes the J174, J175, and J176, differentiated primarily by their IDSS bins. This series was originally manufactured by Fairchild Semiconductor and is now part of the onsemi portfolio. The devices are built on Process 88 silicon technology.
Replacement Considerations
Direct substitutes include other parts from the same family such as the J174, J175, and J176, provided the specific IDSS bin requirements are met. Cross-reference MMBFJ177 for surface-mount equivalents in the SOT-23 package.
FAQ
Are the source and drain terminals interchangeable?
Yes, the datasheet explicitly notes that the source and drain terminals are interchangeable for the J177 device.
What is the maximum gate-source breakdown voltage?
The maximum Gate-Source Breakdown Voltage (B(BR)GSS) is specified as 30 V.
How does the rDS(on) vary between devices?
The Drain-Source On Resistance (rDS(on)) varies based on the specific bin; for the J177, it has a maximum value of 300 Ω.
