J177,126

J177,126

  • Description:JFET P-CH 30V TO92-3
  • Series:-

SKU:f6b442061223 Category: Brand:

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Product Detailed Parameters

  • Description:JFET P-CH 30V TO92-3
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Box (TB)
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):1.5 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:800 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds:8pF @ 10V (VGS)
  • Resistance - RDS(On):300 Ohms
  • Power - Max:400 mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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J177,126

Overview

The J177,126 is a P-channel silicon junction field-effect transistor (JFET) designed for small-signal switching and amplification applications. It features a maximum drain-source breakdown voltage of 30V and a maximum power dissipation of 400mW. The device exhibits a maximum drain-source on-resistance of 300 Ohms and an input capacitance of 8pF at Vds=10V. Packaged in a TO-92-3 through-hole configuration, it operates in depletion mode with a single element structure.

Feature Summary

  • P-channel silicon construction for reliable small-signal operation
  • Through-hole TO-92-3 package suitable for standard mounting
  • Depletion mode functionality for low-power switching

Applications

  • Low-signal switching circuits
  • Small-signal amplification stages
  • General-purpose discrete transistor applications

Procurement Notes

Verify the specific ordering suffix to confirm exact packaging and quantity specifications. Confirm availability status as manufacturing data may indicate end-of-life or limited supply conditions. Ensure compatibility with existing circuit designs regarding pinout and electrical parameters before procurement.

Selection Notes

Select this component for applications requiring a P-channel JFET with a 30V breakdown voltage. Consider the 300 Ohm on-resistance and 400mW power dissipation limits when designing thermal management solutions. Verify that the TO-92-3 package fits the PCB layout constraints.

Part Context

This part belongs to NXP's discrete semiconductor lineup, specifically within the JFET category. It serves as a fundamental active component for analog signal processing tasks where low noise and high input impedance are required. The TO-92 form factor ensures compatibility with legacy and modern through-hole assembly processes.

Replacement Considerations

Consult official substitution lists for equivalent P-channel JFETs with matching 30V ratings and TO-92 packages. Verify pinout compatibility and electrical parameter overlaps to ensure seamless integration without circuit redesign.

J177,126J177,126

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