SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The J177,126 is a P-channel silicon junction field-effect transistor (JFET) designed for small-signal switching and amplification applications. It features a maximum drain-source breakdown voltage of 30V and a maximum power dissipation of 400mW. The device exhibits a maximum drain-source on-resistance of 300 Ohms and an input capacitance of 8pF at Vds=10V. Packaged in a TO-92-3 through-hole configuration, it operates in depletion mode with a single element structure.
Verify the specific ordering suffix to confirm exact packaging and quantity specifications. Confirm availability status as manufacturing data may indicate end-of-life or limited supply conditions. Ensure compatibility with existing circuit designs regarding pinout and electrical parameters before procurement.
Select this component for applications requiring a P-channel JFET with a 30V breakdown voltage. Consider the 300 Ohm on-resistance and 400mW power dissipation limits when designing thermal management solutions. Verify that the TO-92-3 package fits the PCB layout constraints.
This part belongs to NXP's discrete semiconductor lineup, specifically within the JFET category. It serves as a fundamental active component for analog signal processing tasks where low noise and high input impedance are required. The TO-92 form factor ensures compatibility with legacy and modern through-hole assembly processes.
Consult official substitution lists for equivalent P-channel JFETs with matching 30V ratings and TO-92 packages. Verify pinout compatibility and electrical parameter overlaps to ensure seamless integration without circuit redesign.