ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET P-CH 30V TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：1.5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：300 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
Download product information
Overview
The J177_D26Z is a P-Channel Silicon Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for small-signal switching and amplification applications, housed in a TO-92-3 package with formed leads for through-hole mounting. The device operates in depletion mode with a gate-source breakdown voltage of -30V and a drain current of 5mA at Vgs=0. Key electrical characteristics include a maximum power dissipation of 350mW and an on-resistance of 250 Ohms.
Feature Summary
- P-Channel silicon construction for reliable small-signal performance
- Depletion mode operation suitable for analog switching
- Through-hole TO-92-3 packaging for standard board integration
Applications
- Analog signal switching circuits
- Small-signal amplification stages
- Electronic load balancing
Procurement Notes
Verify the specific suffix D26Z against the official onsemi datasheet to confirm lead form and tape/reel specifications. Ensure the component matches the required P-Channel JFET type for the intended circuit topology. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when a P-Channel JFET with low gate leakage and moderate on-resistance is required. The TO-92 package limits power handling capabilities, making it suitable for low-power signal paths rather than high-current power switching applications. Verify thermal constraints during design.
Part Context
This component belongs to the J174-J177 series of P-Channel JFETs from onsemi. These devices are commonly used as replacements for older industry-standard parts. The series offers consistent electrical parameters across variants, facilitating direct pin-for-pin upgrades in existing designs requiring P-channel field-effect transistors.
Replacement Considerations
Compatible substitutes include the MMBFJ177 and J177 from other manufacturers such as Fairchild or Texas Instruments. Verify that replacement parts match the -30V breakdown voltage and 350mW power dissipation ratings to ensure circuit compatibility.
