J177_D27Z

$0.09

Description：JFET P-CH 30V TO92-3
Series：-

SKU:748183a946a5 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET P-CH 30V TO92-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：P-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：1.5 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：800 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：300 Ohms
Power - Max：350 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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J177_D27Z

Overview

The J177_D27Z is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for small-signal switching and amplification applications. The device utilizes silicon technology and is housed in a TO-92-3 Kinked Lead through-hole package. Key electrical characteristics include a gate-source breakdown voltage of -35 V, a gate-source cutoff voltage of -5 V, and a drain-source on-resistance of 50 Ohms. At zero gate-source voltage, the drain-source current is specified at 5 mA. The component supports a maximum power dissipation of 625 mW.

Feature Summary

N-channel junction field-effect transistor configuration
Silicon-based semiconductor technology
Through-hole mounting capability with kinked leads

Applications

Small-signal electronic switching circuits
Low-noise analog signal amplification stages
Electronic load balancing networks

Procurement Notes

Verify the specific suffix D27Z against official onsemi documentation to confirm tape-and-reel or cut-tape availability. Ensure the ordering part number matches the exact pinout and lead form factor required for the target PCB footprint. Cross-reference the manufacturer's latest datasheet revision to confirm compliance with current environmental standards and material declarations before finalizing procurement orders.

Selection Notes

Select this component when an N-channel depletion-mode JFET is required for low-voltage control applications. The TO-92 package is suitable for prototyping and low-volume production where through-hole assembly is preferred. Evaluate the 50 Ohm on-resistance and 625 mW power dissipation limits to ensure compatibility with the circuit's thermal and impedance requirements. Confirm that the -35 V gate-source breakdown voltage provides sufficient margin for the intended operating conditions.

Part Context

This component belongs to the J112 series of N-channel JFETs produced by onsemi. The series is characterized by its use in general-purpose small-signal applications. The J177_D27Z designation identifies the specific variant within this family, distinguished by its packaging and manufacturing lot codes. It serves as a discrete semiconductor solution for linear and switching operations in consumer and industrial electronics.