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Product Detailed Parameters
- Description：JFET N-CH 40V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：200 µA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：300 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The MMBFJ201 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a surface-mount SOT-23-3 package, also designated as TO-236-3 or SC-59. The device features a maximum power dissipation of 350 mW and a gate-source breakdown voltage of 40 V. It operates within a junction temperature range of -55°C to 150°C. Key electrical characteristics include a gate-source cutoff voltage of 300 mV at 10 nA drain current.
Feature Summary
- N-channel JFET configuration for signal processing
- Surface-mount SOT-23-3 packaging for compact integration
- High breakdown voltage capability of 40 V
- Wide operating temperature range up to 150°C
Applications
- Low-noise amplifier circuits
- Analog switch applications
- Voltage-controlled resistor implementations
Procurement Notes
Verify the specific manufacturer part number, typically MMBFJ201, against official onsemi documentation to ensure component authenticity. Confirm that the ordering suffix matches the required tape-and-reel or cut-tape packaging format. Ensure compliance with RoHS directives and check for any recent Product Change Notifications regarding assembly or material declarations before finalizing procurement.
Selection Notes
Select this component when a small-signal N-channel JFET is required in a space-constrained surface-mount design. The SOT-23-3 footprint allows for automated placement. Consider the 40 V breakdown rating and 350 mW power dissipation limits during thermal management planning. Verify that the 300 mV cutoff voltage specification aligns with the target circuit's biasing requirements.
Part Context
This component belongs to the MMBFJ2 series of small-signal JFETs from onsemi. It serves as a surface-mount alternative to through-hole variants like the standard J201. The series includes complementary or related devices such as the MMBFJ202, which shares similar packaging but may differ in specific electrical parameters like cutoff voltage.
Replacement Considerations
Cross-reference with MMBFJ202 for potential pin-compatible alternatives within the same family. Verify exact electrical parameter matching, particularly regarding Vgs(off), before substituting with other manufacturers' JFETs in the SOT-23-3 package.
