JAN1N5822US

Single Diodes Overview

The JAN1N5822US is a single silicon Schottky barrier rectifier manufactured by Microchip Technology. It features a maximum average forward rectified current of 3 A and a repetitive peak reverse voltage (VRRM) of 40 V. The device exhibits a maximum forward voltage drop of 700 mV at rated current and a maximum reverse leakage current of 100 µA. It operates within a junction temperature range of -65°C to +125°C and supports a forward surge current of 80 A. The component is available in surface mount SQ-MELF packages, including the JAN1N5822US/TR variant.

Single Diodes Feature Summary

• Hermetically sealed construction for high reliability
• Schottky barrier technology for low forward voltage drop
• Radiation tolerant performance suitable for harsh environments
• Double plug metallurgical bond construction

Single Diodes Applications

• Secondary rectification in switching mode power supplies
• High frequency DC-to-DC converters
• Low voltage step-down chopper drives
• Redundancy OR-ing circuits
• Reverse polarity protection

Single Diodes Procurement Notes

Verify the specific package suffix against the datasheet, as JAN1N5822US denotes the standard SQ-MELF surface mount form while JAN1N5822US/TR indicates tape and reel packaging. Confirm that the required radiation hardness levels meet mission specifications, as this component is qualified under MIL-PRF-19500/620 standards. Ensure thermal management aligns with the specified operating temperature range.

Single Diodes Selection Notes

Select this component when a hermetically sealed, radiation-tolerant Schottky rectifier is required for space or military applications. It serves as a direct replacement for standard 1N5822 diodes where environmental ruggedness is critical. Consider the surface mount footprint compatibility with industry-standard D5B layouts during PCB design. Evaluate thermal derating requirements if operation exceeds the typical case temperature.

Single Diodes Part Context

This part belongs to the 1N582x series of 3 Ampere Schottky barrier rectifiers produced by Microchip/Microsemi. The JAN prefix signifies a military-grade qualification level. The series includes variants such as 1N5821 and 1N5822, differentiated primarily by their peak reverse voltage ratings. These devices are designed for high-reliability applications requiring low conduction losses and fast switching characteristics.

Single Diodes Replacement Considerations

• 1N5822U
• JAN1N5822

Single Diodes FAQ

What is the maximum junction temperature for the JAN1N5822US?

The maximum operating junction temperature is +125°C.

Is the JAN1N5822US hermetically sealed?

Yes, the component features hermetically sealed construction.