JAN2N2605

Single Bipolar Transistors Overview

The JAN2N2605 is a PNP bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 30 mA. The device dissipates up to 400 mW of power and operates within a junction temperature range of -65°C to +200°C. It is housed in a TO-46 metal can package with MIL-PRF-19500/354 qualification.

Single Bipolar Transistors Feature Summary

• Military-grade reliability certified under MIL-PRF-19500/354 standards
• High thermal stability supporting extended junction temperatures up to 200°C
• Robust metal can construction for harsh environment durability

Single Bipolar Transistors Applications

• Military aerospace electronic systems
• Harsh environment signal processing circuits
• High-reliability analog switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific JAN prefix suffix against official Microchip documentation to confirm military qualification status. Ensure procurement channels provide traceable lot data compliant with MIL-PRF-19500/354 requirements. Confirm RoHS exemption status as military parts often lack standard compliance markings.

Single Bipolar Transistors Selection Notes

Select this component when military certification and high-temperature operation are mandatory. The TO-46 package requires through-hole mounting considerations. Verify that the 30 mA current limit and 60 V breakdown voltage align with circuit design constraints before integration.

Single Bipolar Transistors Part Context

This part belongs to the 2N2605 family of PNP transistors produced by Microchip Technology. The JAN designation indicates adherence to strict military performance specifications, distinguishing it from commercial variants. It serves as a rugged discrete semiconductor solution for defense and space applications requiring proven long-term reliability.

Single Bipolar Transistors Replacement Considerations

Direct substitute: 2N2605.