JAN2N2857

Overview

The JAN2N2857 is a silicon NPN RF small signal bipolar transistor manufactured by Microsemi. It operates in the ultra-high frequency band with a maximum collector-emitter voltage of 15 V and an emitter-base voltage of 3 V. The device supports a continuous collector current of 40 mA and a power dissipation of 200 mW. It features a minimum DC current gain (hFE) of 30. The component is designed for surface mount installation in a UB-3 package, operating within a temperature range of -65 °C to +200 °C.

Feature Summary

• Hermetically sealed ceramic construction suitable for harsh environments
• Qualified per MIL-PRF-19500 standards for military applications
• Optimized for ultra-high frequency RF signal processing

Applications

• Military radar systems
• Satellite communication equipment
• Avionics signal amplification

Procurement Notes

Verify that the ordering suffix matches the required qualification level, as prefixes such as JANTXV or JANS indicate different screening levels. Confirm the package type corresponds to the UB-3 form factor. Ensure the manufacturer source is authorized to provide components meeting the specified MIL-PRF-19500 requirements.

Selection Notes

Select this component when high reliability and radiation hardness are required for RF circuits. Compare the 15 V breakdown voltage against circuit requirements. Verify thermal management capabilities for the 200 mW dissipation limit in the UB-3 package.

Part Context

This part belongs to the 2N2857 family of silicon NPN transistors. Variants include commercial versions and higher screening levels like JANTXV and JANS. The JAN level represents the base military qualification standard for this specific transistor design.

Replacement Considerations

Equivalent parts include JANTXV2N2857UB and JANS2N2857UB. Verify pinout compatibility and electrical parameter margins before substitution.