JAN2N2857UB

Overview

The JAN2N2857UB is an NPN silicon RF small-signal bipolar junction transistor manufactured by Microsemi Corporation. It operates in the ultra-high frequency band with a maximum collector-emitter voltage of 15 V and a continuous collector current of 40 mA. The device features a minimum DC current gain (hFE) of 30 and is housed in a hermetically sealed CERSOT-3 ceramic package. It supports a maximum power dissipation of 200 mW and functions within a temperature range of -65°C to +200°C.

Feature Summary

• Hermetically sealed ceramic construction for environmental protection
• Ultra-high frequency operation capability
• High thermal stability up to 200°C

Applications

• Military radio frequency amplification
• Spacecraft communication systems
• Harsh environment signal processing

Procurement Notes

Verify the specific manufacturer source, as Microsemi products may be sourced from authorized distributors or legacy suppliers like Semicoa. Confirm that the component meets MIL-PRF-19500 standards and check for lot traceability documentation required for defense applications.

Selection Notes

Select this component when high-frequency performance and radiation hardness are critical. Ensure the circuit design accommodates the 15V voltage limit and 40mA current constraint. Verify that the CERSOT-3 package fits the available board space and mounting requirements.

Part Context

This part belongs to the 2N2857 family of RF transistors. It shares specifications with variants such as JANS2N2857UB but differs in qualification levels. The JAN suffix indicates military-grade reliability without the enhanced screening of the JANS level.

Replacement Considerations

JANS2N2857UB offers equivalent electrical characteristics with potentially stricter screening. JANTXV2N2857UB provides similar performance with different quality assurance protocols.