JAN2N3637

Single Bipolar Transistors Overview

The JAN2N3637 is a PNP silicon small-signal transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 175 V and a continuous collector current of 1 A. The device operates within a temperature range of -65°C to +200°C. Key electrical parameters include a minimum DC current gain (hFE) of 55 at 100 uA and 10 V, with a maximum hFE of 300 at -50 mA and -10 V. Power dissipation varies by package configuration.

Single Bipolar Transistors Feature Summary

• Qualified under MIL-PRF-19500/357 standards for high-reliability applications
• Designed for operation in extreme thermal environments up to 200°C
• Utilizes silicon technology for stable bipolar junction transistor performance

Single Bipolar Transistors Applications

• Military aerospace electronic systems
• High-temperature industrial control circuits
• Ruggedized signal processing hardware

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation when ordering, as it determines the physical package type and mounting style. Confirm that the procurement channel provides traceable documentation required for military-grade components. Ensure the received part matches the exact JAN2N3637 specification sheet provided by Microchip Technology to guarantee compliance with operational requirements.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust PNP switching or amplification in harsh conditions. Consider the power dissipation limits relative to the chosen package style, whether surface mount or through-hole. Evaluate the thermal management strategy to maintain performance within the specified operating temperature range during continuous operation.

Single Bipolar Transistors Part Context

This component belongs to the 2N3637 family of low-power PNP transistors. Variants such as JAN2N3637L/TR utilize TO-5 packages, while JAN2N3637UB/TR employs LCC-3 surface mount configurations. All variants share core electrical characteristics but differ in mechanical form factors suitable for different assembly technologies.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the JAN2N3637L and JAN2N3637UB from Microchip. Cross-manufacturer equivalents like the ON Semiconductor 2N3637L may match electrical specs but require verification of qualification standards and package compatibility before integration.