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Product Detailed Parameters
- Description：RF TRANS PNP 30V 30MA UB
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Transistor Type：PNP
- Voltage - Collector Emitter Breakdown (Max)：30V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：3.5dB @ 450MHz
- Gain：25dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 10V
- Current - Collector (Ic) (Max)：30mA
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：-
- Qualification：-
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Overview
The JAN2N4957UB is a PNP silicon bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a single configuration housed in an LCC-3 surface-mount package. The device supports a maximum DC collector current of 30 mA and withstands a collector-emitter voltage (VCEO) of 30 V, with a matching collector-base voltage (VCBO) of 30 V. The emitter-base voltage (VEBO) is rated at 3 V. Power dissipation is limited to 200 mW. The component operates within a temperature range of -65 °C to +200 °C. DC current gain (hFE) ranges from 10 to 165 at -5 mA and 10 V.
Feature Summary
- High-temperature operation capability up to 200 °C
- Silicon PNP construction for reliable switching
- Surface-mount LCC-3 packaging for compact integration
Applications
- High-temperature electronic circuits
- Military-grade signal processing systems
- Precision current switching applications
Procurement Notes
Verify the manufacturer designation carefully, as the part is listed under Microchip Technology despite the historical Microsemi branding. Confirm the specific suffix 'UB' matches the required military qualification level. Ensure the LCC-3 package footprint aligns with the target PCB design before ordering.
Selection Notes
Select this component when high thermal stability is required, given the +200 °C maximum operating temperature. The 30 mA current rating suits low-power switching tasks. Verify that the PNP polarity and LCC-3 form factor are compatible with the existing circuit topology and board space constraints.
Part Context
This component belongs to the JAN series of qualified discrete semiconductors. It represents a transition from the legacy Microsemi brand to Microchip Technology following corporate acquisitions. The part maintains specific military reliability standards while utilizing modern surface-mount technology.
Replacement Considerations
Direct substitutes include other JAN-qualified PNP transistors in LCC-3 packages with comparable 30 V and 30 mA ratings. Verify electrical parameters such as hFE and power dissipation match the original design requirements.
