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Product Detailed Parameters
- Description：TRANS 2NPN 40V 600MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：900mV @ 30mA, 300mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：600mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：Military
- Qualification：MIL-PRF-19500/495
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Overview
The JAN2N5794A is a dual small-signal NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 40 V and a collector-base voltage of 75 V, with an emitter-base voltage rating of 6 V. The device supports a continuous collector current of 600 mA and dissipates up to 600 mW of power. It operates within a temperature range of -65 °C to +200 °C. The component utilizes silicon technology and is available in surface-mount packages.
Feature Summary
- Dual configuration integrating two NPN transistors within a single package for space-efficient circuit design.
- High-temperature operation capability extending up to +200 °C for demanding environments.
- Silicon-based construction providing robust performance for general-purpose switching and amplification.
Applications
- General-purpose signal amplification in electronic circuits.
- High-temperature switching applications requiring reliable semiconductor performance.
- Compact dual-transistor configurations in consumer and industrial electronics.
Procurement Notes
Verify the specific suffix against official Microchip documentation to confirm exact packaging and qualification levels. Ensure compatibility with existing board layouts and thermal management requirements before integration. Confirm RoHS status and environmental compliance through the manufacturer's latest datasheet.
Selection Notes
Select this component when a dual NPN BJT configuration is required for compact designs. Consider the 600 mA current limit and 600 mW power dissipation for thermal planning. Verify that the 40 V collector-emitter voltage meets the circuit's operational requirements under all conditions.
Part Context
This component belongs to the 2N5794 series of dual small-signal transistors produced by Microchip Technology. The series is designed for applications requiring multiple NPN transistors in a minimal footprint. It serves as a standard solution for signal processing and switching tasks in various electronic systems.
Replacement Considerations
Consult Microchip's official substitution guide for verified alternatives. Cross-reference electrical parameters such as VCEO, IC, and hFE to ensure functional equivalence without modifying the circuit design.
