JANHCA2N3810

Overview

The JANHCA2N3810 is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an NPN configuration housed in a TO-78-6 metal can package suitable for through-hole mounting. The device supports a maximum collector-emitter voltage of 60V and a continuous collector current of 30mA. Power dissipation is rated at 350mW. This component is designed for high-reliability applications requiring robust semiconductor performance.

Feature Summary

• Dual NPN transistor array configuration
• TO-78-6 hermetic metal can packaging
• High-reliability construction for demanding environments

Applications

• Military aerospace electronic systems
• Defense communication equipment
• High-reliability signal processing circuits

Procurement Notes

Verify the specific manufacturer lot traceability and quality certification levels required for your procurement. Ensure that the ordering documentation explicitly confirms the JANHCA prefix to guarantee the correct hermetic package and reliability grade. Confirm compliance with applicable defense or aerospace standards before finalizing purchase orders.

Selection Notes

Select this component when a hermetically sealed dual NPN BJT is required for harsh environmental conditions. The TO-78-6 package provides superior protection against moisture and contaminants compared to standard plastic packages. Consider thermal management requirements given the 350mW power dissipation rating in enclosed assemblies.

Part Context

This part belongs to the 2N3810 series of dual small-signal transistors. It represents the high-reliability JANHCA variant, distinguished by its hermetic metal can construction. This series is commonly utilized in critical electronic systems where long-term stability and resistance to extreme physical stress are mandatory operational requirements.

Replacement Considerations

Direct replacements include JAN2N3810 for through-hole equivalents and JANTX2N3810U/TR for surface mount alternatives. Verify pin compatibility and electrical parameter alignment when substituting non-hermetic variants in existing designs.