JANS2N5794U/TR

Overview

The JANS2N5794U/TR is a dual small-signal NPN bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface-mount installation in an SMD/SMT configuration. The device features a maximum collector-emitter voltage of 40 V, a collector-base voltage of 75 V, and an emitter-base voltage of 6 V. It supports a continuous collector current of 600 mA with a power dissipation rating of 600 mW. The component operates within a temperature range of -65°C to +200°C and achieves a maximum DC current gain of 300 at 150 mA and 10 V.

Feature Summary

• Dual NPN configuration for compact circuit integration
• Extended high-temperature operation up to 200°C
• Silicon-based construction for reliability

Applications

• High-reliability aerospace systems
• Military-grade electronic circuits
• Spacecraft signal processing components

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm compliance with required military or aerospace standards. Ensure that the procurement channel provides valid traceability records and quality certifications appropriate for JANS series components before finalizing acquisition.

Selection Notes

Select this component when a dual NPN BJT with high thermal tolerance and moderate current handling is required for space-constrained designs. Confirm that the 600 mA continuous current and 600 mW power dissipation limits align with the target circuit's operational demands and thermal management capabilities.

Part Context

This part belongs to the JANS series, which denotes radiation-hardened or high-reliability variants produced under strict quality controls. It serves as a specialized discrete semiconductor solution for environments where standard commercial parts may fail due to harsh conditions or stringent reliability requirements.

Replacement Considerations

Consult official Microchip documentation for verified equivalent part numbers. Do not substitute with generic commercial BJTs without confirming electrical parameter compatibility and environmental qualification standards.