JANSD2N2222AUB

Single Bipolar Transistors Overview

The JANSD2N2222AUB is a radiation-hardened NPN silicon small-signal switching transistor manufactured by Microchip Technology. It is designed for high-reliability aerospace and defense applications requiring resistance to ionizing radiation. The device features a hermetic ceramic surface-mount package, specifically the UB form factor, ensuring environmental stability. It complies with MIL-PRF-19500/255 specifications, offering a total ionizing dose tolerance of 10 krad(Si). Key electrical characteristics include a maximum collector-emitter voltage of 50 V, a continuous collector current of 800 mA, and a power dissipation rating of 500 mW.

Single Bipolar Transistors Feature Summary

• Radiation hardened to withstand 10 krad(Si) total ionizing dose exposure
• Hermetic ceramic surface-mount construction for harsh environments
• Qualified to MIL-PRF-19500/255 standards for high reliability

Single Bipolar Transistors Applications

• Aerospace electronic systems
• Military communication equipment
• High-reliability switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm radiation hardness levels and qualification status. Ensure procurement channels are authorized to guarantee component authenticity and traceability. Confirm that the hermetic seal integrity meets project requirements for vacuum or extreme temperature operation. Cross-reference the datasheet revision date to ensure compliance with current manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance is critical for mission success in space or high-altitude operations. The UB surface-mount package facilitates automated assembly while maintaining hermetic sealing. Compare performance parameters such as DC current gain and saturation voltage against circuit requirements. Consider the thermal management capabilities of the ceramic package during high-power switching cycles.

Single Bipolar Transistors Part Context

This part belongs to the JANSD series of radiation-hardened bipolar junction transistors from Microchip Technology. The JANSD designation indicates a specific radiation hardness level of 10 krad(Si), distinguishing it from lower-radiation-tolerance variants like JAN or JANTX. The UB package provides a compact, leadless surface-mount footprint suitable for dense PCB layouts in constrained aerospace modules.

Single Bipolar Transistors FAQ

What is the total ionizing dose tolerance for the JANSD2N2222AUB?

The JANSD2N2222AUB is qualified to withstand a total ionizing dose of 10 krad(Si).

What type of package does the JANSD2N2222AUB use?

It utilizes a hermetic ceramic surface-mount package designated as UB.

Is the JANSD2N2222AUB compliant with military specifications?

Yes, it is qualified to MIL-PRF-19500/255 standards.