Single Bipolar Transistors JANSD2N3637UB/TR product image

JANSD2N3637UB/TR

$125.21
  • Description:TRANS PNP 175V 1A UB
  • Series:-

SKU:6f78a4dc5b25 Category: Brand:

  
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JANSD2N3637UB/TR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 175V 1A UB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSD2N3637UB/TR

  • Description:TRANS PNP 175V 1A UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):175 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 10V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/357

Single Bipolar Transistors datasheet and documents for JANSD2N3637UB/TR

JANSD2N3637UB/TR

Single Bipolar Transistors Overview

The JANSD2N3637UB/TR is a PNP silicon bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a surface-mount LCC-3 package and supports a maximum collector current of 1 A with a collector-emitter voltage of 175 V. The device operates within a temperature range of -65°C to +200°C, offering high thermal stability. Key electrical characteristics include a minimum DC current gain of 55 at low currents and up to 300 at higher currents, with a power dissipation rating of 1 W.

Single Bipolar Transistors Feature Summary

  • High-temperature operation capability extending to +200°C for demanding environments
  • Robust voltage handling with 175 V collector-emitter breakdown
  • Surface-mount LCC-3 packaging for compact integration
  • Wide current gain range suitable for various signal amplification needs

Single Bipolar Transistors Applications

  • Military and aerospace electronic systems requiring radiation-hardened components
  • High-reliability industrial control circuits
  • Automotive electronics operating in extreme thermal conditions
  • Spacecraft subsystems and satellite communication equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to ensure compliance with required radiation hardness levels and screening standards. Confirm that the LCC-3 package variant matches the PCB footprint requirements. Check for RoHS compliance status if environmental regulations apply to the final assembly. Ensure storage conditions maintain component integrity prior to soldering.

Single Bipolar Transistors Selection Notes

Select this component when high-temperature resilience and radiation tolerance are critical design parameters. The PNP configuration and 175 V rating make it suitable for high-voltage switching applications. Consider the LCC-3 package constraints during layout design. Evaluate thermal management strategies given the 1 W power dissipation limit in enclosed spaces.

Single Bipolar Transistors Part Context

This part belongs to Microchip's JAN series of radiation-hardened bipolar transistors. The JAN designation indicates adherence to strict military quality standards. The UB suffix typically denotes specific lead frame or plating specifications. The TR suffix confirms tape-and-reel packaging for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other JAN-rated PNP transistors with similar voltage and current ratings. Verify pinout compatibility before replacing. Cross-reference with MIL-SPEC equivalents for identical performance profiles. Ensure thermal characteristics match the original design constraints.

JANSD2N3637UB/TRJANSD2N3637UB/TR
$125.21
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