Single Bipolar Transistors JANSF2N2221AUB product image

JANSF2N2221AUB

$118.46
  • Description:TRANS NPN 50V 0.8A UB
  • Series:-

SKU:767b0754a43b Category: Brand:

  
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JANSF2N2221AUB is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is TRANS NPN 50V 0.8A UB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSF2N2221AUB

  • Description:TRANS NPN 50V 0.8A UB
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Tray
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 10V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/255

Single Bipolar Transistors datasheet and documents for JANSF2N2221AUB

JANSF2N2221AUB

Single Bipolar Transistors Overview

The JANSF2N2221AUB is a radiation-hardened NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Microsemi. It is designed for high-reliability applications requiring resistance to ionizing radiation. The device features a ceramic surface-mount package with three leads, providing robust mechanical stability. Key electrical specifications include a collector-emitter voltage of 50V and a maximum collector current of 800mA. The component is qualified to MIL-PRF-19500/255 standards, ensuring performance in harsh environments.

Single Bipolar Transistors Feature Summary

  • Radiation hardened to withstand total ionizing dose levels up to 3KRads(Si)
  • Constructed using silicon technology for reliable switching performance
  • Utilizes a hermetically sealed ceramic surface-mount package

Single Bipolar Transistors Applications

  • Military aerospace electronic systems
  • Satellite communication circuits
  • High-reliability switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific radiation hardness level required for the application against the JANSM qualification data. Confirm that the ceramic surface-mount package meets the mechanical constraints of the design. Ensure compliance with relevant military specifications during integration. Check for any recent product change notifications regarding manufacturing sites or materials.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance is critical for circuit longevity. Compare the 3KRads(Si) rating against environmental exposure predictions. Consider the thermal management requirements associated with the ceramic package. Evaluate alternative radiation-hardened variants if higher dose tolerance is necessary for the mission profile.

Single Bipolar Transistors Part Context

This part belongs to the family of radiation-hardened NPN switching transistors produced by Microsemi. These devices are engineered to maintain electrical characteristics under significant ionizing radiation exposure. The series includes various qualification levels to suit different mission durations and orbital conditions.

JANSF2N2221AUBJANSF2N2221AUB
$118.46
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