Single Bipolar Transistors JANSF2N2369AUBC/TR product image

JANSF2N2369AUBC/TR

$214.80
  • Description:RH SMALL-SIGNAL BJT
  • Series:-

SKU:ef52a291e184 Category: Brand:

  
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JANSF2N2369AUBC/TR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RH SMALL-SIGNAL BJT. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSF2N2369AUBC/TR

  • Description:RH SMALL-SIGNAL BJT
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):15 V
  • Vce Saturation (Max) @ Ib, Ic:450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 100mA, 1V
  • Power - Max:360 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UBC
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for JANSF2N2369AUBC/TR

JANSF2N2369AUBC/TR

Single Bipolar Transistors Overview

The JANSF2N2369AUBC/TR is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an NPN configuration housed in a 3-pin ceramic RH package designed for surface-mount applications. The device supports a maximum collector current of 200 mA and dissipates up to 680 mW of power. Key voltage ratings include a collector-emitter breakdown voltage of 20 V, a collector-base voltage of 40 V, and an emitter-base voltage of 4.5 V. It operates within a temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

  • Dual NPN configuration integrated into a single compact component
  • Radiation-hardened design suitable for harsh environments
  • High thermal stability with extended operating temperature limits

Single Bipolar Transistors Applications

  • Military aerospace systems requiring radiation tolerance
  • High-speed switching circuits in defense electronics
  • Low-power signal processing in satellite communications

Single Bipolar Transistors Procurement Notes

Verify the specific JANS screening level and traceability documentation required for your procurement. Confirm that the ceramic RH package matches your PCB footprint and thermal management strategy. Ensure compliance with export control regulations associated with radiation-hardened components before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a dual NPN topology is necessary within a constrained surface-mount area. The radiation-hardened specification makes it appropriate for space or high-altitude missions where standard silicon devices may fail due to ionizing radiation exposure.

Single Bipolar Transistors Part Context

This part belongs to the 2N2369 family of small-signal transistors produced under military specifications. While standard versions use metal cans, this variant utilizes a specialized ceramic surface-mount package to meet rigorous environmental and reliability standards for advanced electronic systems.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include JAN2N2369A and JANTX2N2369A for through-hole applications, though package differences require adapter considerations. Verify electrical equivalence for dual configurations if replacing with single-transistor arrays.

JANSF2N2369AUBC/TRJANSF2N2369AUBC/TR
$214.80
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