SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JANSF2N2920 is a radiation-hardened dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features two NPN transistors in a single TO-78-6 metal can package, designed for through-hole mounting. The device supports an operating temperature range of -65°C to +200°C (junction). Key electrical specifications include a collector-emitter voltage rating of 60V, a continuous collector current of 30mA, and a total power dissipation of 350mW. This component is engineered for high-reliability applications requiring tolerance to ionizing radiation.
Verify the specific suffix designation against the official Microchip datasheet to confirm radiation hardness levels and pinout compatibility. Ensure that the procurement channel provides traceability documentation required for military or aerospace contracts. Confirm that the TO-78-6 package dimensions match the target PCB footprint requirements before finalizing orders.
Select this component when radiation tolerance and wide temperature operation are critical constraints. The dual NPN structure simplifies circuit design compared to using discrete single transistors. Consider the TO-78-6 package size limitations and thermal management needs associated with the 350mW power dissipation rating in enclosed environments.
This part belongs to the JANS series of radiation-hardened semiconductors from Microchip Technology. It serves as a specialized alternative to standard commercial-grade BJTs like the 2N2920, offering enhanced durability against space radiation effects while maintaining similar electrical performance characteristics for signal switching applications.
JANSR2N2920