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The JANSL2N3810U/TR is a dual small-signal PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 60V and a maximum DC collector current of 50mA. The device has a power dissipation rating of 350mW and operates within a temperature range of -65°C to +200°C. It utilizes a surface-mount SQ package configuration.
Verify the specific suffix 'TR' against official Microchip documentation to confirm tape-and-reel packaging status, as distributor listings may vary. Confirm RoHS compliance requirements, as military variants often fall outside standard environmental directives. Validate the exact package dimensions for PCB footprint compatibility before finalizing procurement orders.
Select this component when a dual PNP BJT in a compact surface-mount form factor is required for high-temperature environments. Ensure the 60V voltage rating and 50mA current limits meet circuit demands. Compare against through-hole alternatives like the TO-78 package if space constraints allow or if higher thermal mass is needed for specific power dissipation scenarios.
This part belongs to the 2N3810 series of silicon PNP transistors produced by Microchip Technology. The series includes various screening levels and package options, ranging from hermetically sealed metal cans to surface-mount configurations. The JAN prefix indicates a specific military qualification level within the broader product family.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify cross-reference data directly with Microchip Technology or authorized distributors for equivalent components.