JANSM2N2221AUBC/TR

Single Bipolar Transistors Overview

The JANSM2N2221AUBC/TR is a silicon NPN small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes the TO-206AA metal can package and is designed for high-reliability applications requiring radiation hardness. The device supports a maximum collector current of 800 mA and operates with a collector-emitter voltage rating of 50 V. It provides a total power dissipation capacity of 500 mW at an ambient temperature of +25 °C. The component meets MIL-STD-19500 specifications and offers a radiation tolerance level of 30 kRad(Si), making it suitable for aerospace and defense environments.

Single Bipolar Transistors Feature Summary

• Radiation-hardened design providing 30 kRad(Si) tolerance for reliable operation in harsh electromagnetic environments
• High thermal stability allowing operation across an extended temperature range from -65 °C to +200 °C
• Robust metal can construction ensuring mechanical durability and long-term reliability

Single Bipolar Transistors Applications

• Military avionics systems requiring radiation-resistant components
• Spacecraft electronic subsystems exposed to ionizing radiation
• Defense communication equipment operating in high-radiation zones

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm radiation hardness levels and pinout configurations. Ensure compliance with MIL-STD-19500 standards is explicitly stated in the datasheet for the requested variant. Confirm that the manufacturer source is authorized, as this component type is subject to strict export controls and quality assurance requirements.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs demand verified radiation tolerance rather than standard commercial-grade transistors. Consider the TO-206AA package constraints regarding board space and mounting methods compared to surface-mount alternatives. Evaluate the thermal management requirements given the 500 mW dissipation limit and the potential need for heat sinking in enclosed military enclosures.

Single Bipolar Transistors Part Context

This part belongs to the 2N2221A family of NPN switching transistors produced under military specifications. It shares functional similarities with other JAN-series devices but is distinguished by its specific radiation hardening qualification. The component serves as a critical discrete element in high-reliability analog and digital switching circuits where failure is not an option.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include JANSD2N2221AUBC/TR and JANSL2N2221AL, provided they meet the required radiation tolerance and package dimensions. Verify that any replacement maintains the same DC current gain characteristics and voltage ratings to ensure circuit compatibility without redesign.