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JANSM2N2222AL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 50V 0.8A TO-18. Review the specifications below when checking this part for your BOM.
The JANSM2N2222AL is a radiation-hardened NPN silicon switching transistor manufactured by Microchip Technology. It is qualified to MIL-PRF-19500/255 Level M, providing resistance to 10K Rads (Si) total ionizing dose. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 800 mA. Power dissipation is rated at 500 mW with an operating temperature range from -65°C to +200°C. It utilizes a surface-mount LCC-3 package.
Verify the specific manufacturing lot date code and radiation test certificates upon receipt. Confirm that the LCC-3 surface mount footprint matches the design schematic. Ensure handling procedures comply with electrostatic discharge standards for ceramic packages. Validate component authenticity through authorized Microchip distributors only.
Select this component when radiation hardness is mandatory for space or defense environments. Compare against JANSD variants if higher 100K Rad tolerance is required. Verify that the 50V collector rating meets circuit voltage headroom requirements. Consider the LCC-3 package constraints for PCB layout and thermal management.
This part belongs to the JANS family of radiation-hardened bipolar junction transistors. It serves as a specialized variant of the standard 2N2222A, engineered for harsh environments where total ionizing dose effects could compromise performance. The manufacturer ensures strict process controls to maintain reliability under extreme conditions.
JANSM2N2222AUB
It is qualified to MIL-PRF-19500/255 Level M, offering 10K Rads (Si) tolerance.
Yes, it is housed in an LCC-3 surface mount package.
The maximum operating temperature is +200°C.
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