Single Bipolar Transistors JANSM2N2222AL product image

JANSM2N2222AL

$83.74
  • Description:TRANS NPN 50V 0.8A TO-18
  • Series:-

SKU:e48e7a6256bb Category: Brand:

  
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JANSM2N2222AL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 50V 0.8A TO-18. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSM2N2222AL

  • Description:TRANS NPN 50V 0.8A TO-18
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)
  • Grade:Military
  • Qualification:MIL-PRF-19500/255

Single Bipolar Transistors datasheet and documents for JANSM2N2222AL

JANSM2N2222AL

Single Bipolar Transistors Overview

The JANSM2N2222AL is a radiation-hardened NPN silicon switching transistor manufactured by Microchip Technology. It is qualified to MIL-PRF-19500/255 Level M, providing resistance to 10K Rads (Si) total ionizing dose. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 800 mA. Power dissipation is rated at 500 mW with an operating temperature range from -65°C to +200°C. It utilizes a surface-mount LCC-3 package.

Single Bipolar Transistors Feature Summary

  • Radiation hardened to MIL-PRF-19500/255 Level M for 10K Rads (Si) tolerance
  • High thermal stability with extended operating temperature up to +200°C
  • Silicon NPN construction optimized for high-speed switching applications

Single Bipolar Transistors Applications

  • Military satellite communication systems
  • Spacecraft avionics and control circuits
  • High-reliability radar signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturing lot date code and radiation test certificates upon receipt. Confirm that the LCC-3 surface mount footprint matches the design schematic. Ensure handling procedures comply with electrostatic discharge standards for ceramic packages. Validate component authenticity through authorized Microchip distributors only.

Single Bipolar Transistors Selection Notes

Select this component when radiation hardness is mandatory for space or defense environments. Compare against JANSD variants if higher 100K Rad tolerance is required. Verify that the 50V collector rating meets circuit voltage headroom requirements. Consider the LCC-3 package constraints for PCB layout and thermal management.

Single Bipolar Transistors Part Context

This part belongs to the JANS family of radiation-hardened bipolar junction transistors. It serves as a specialized variant of the standard 2N2222A, engineered for harsh environments where total ionizing dose effects could compromise performance. The manufacturer ensures strict process controls to maintain reliability under extreme conditions.

Single Bipolar Transistors Replacement Considerations

JANSM2N2222AUB

Single Bipolar Transistors FAQ

What is the radiation tolerance level for the JANSM2N2222AL?

It is qualified to MIL-PRF-19500/255 Level M, offering 10K Rads (Si) tolerance.

Does this transistor support surface mount installation?

Yes, it is housed in an LCC-3 surface mount package.

What is the maximum operating temperature?

The maximum operating temperature is +200°C.

JANSM2N2222ALJANSM2N2222AL
$83.74
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