JANSM2N3501L

Single Bipolar Transistors Overview

The JANSM2N3501L is a radiation-hardened NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-5 metal can package with three pins. The device supports surface mount or through-hole installation styles depending on the specific variant configuration, though the JANSM prefix typically denotes a hermetic ceramic or metal case suitable for harsh environments. Key electrical ratings include a collector-emitter voltage of 150 V, a collector-base voltage of 150 V, and an emitter-base voltage of 6 V. The maximum DC collector current is rated at 300 mA, with a power dissipation capacity of 1 W. The operating temperature range extends from -65°C to +200°C.

Single Bipolar Transistors Feature Summary

• Radiation hardened design qualified for space and high-radiation environments
• Hermetic metal or ceramic packaging ensuring environmental stability
• High thermal performance supporting operation up to 200°C
• Silicon planar construction for reliable small-signal amplification

Single Bipolar Transistors Applications

• Spacecraft avionics and satellite communication systems
• Military radar and electronic warfare equipment
• High-reliability industrial control circuits
• Nuclear instrumentation and monitoring systems

Single Bipolar Transistors Procurement Notes

Verify the specific radiation hardness level (e.g., total ionizing dose tolerance) required for your application against the manufacturer's datasheet specifications. Confirm that the TO-5 package dimensions and pinout match your PCB footprint or socket requirements. Ensure compliance with MIL-PRF-19500 standards if military-grade qualification is mandated. Check for any recent product change notifications regarding material composition or manufacturing site updates.

Single Bipolar Transistors Selection Notes

Select this component when high radiation tolerance and wide temperature operation are critical. Compare the 150V breakdown voltage and 300mA current limits against circuit demands. Consider the hermetic seal benefits over plastic packages for long-term reliability in vacuum or corrosive conditions. Evaluate the thermal resistance characteristics for heat dissipation needs within the 1W power limit.

Single Bipolar Transistors Part Context

This part belongs to the 2N3501 family of NPN transistors produced under military and aerospace quality standards. The JANSM suffix indicates a specific radiation-hardened variant within Microchip's broad portfolio of discrete semiconductors. These devices are engineered to maintain performance integrity in environments where standard commercial transistors would fail due to radiation-induced degradation or extreme thermal stress.

Single Bipolar Transistors Replacement Considerations

Direct replacements must match the radiation hardness specification and hermetic package type. Verify equivalent parts such as other JAN-series 2N3501 variants from authorized manufacturers. Ensure substitute components meet the same MIL-PRF-19500 qualifications. Generic commercial equivalents may lack the necessary radiation tolerance and should be avoided in certified applications.