JANSM2N3810U

Overview

The JANSM2N3810U is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features silicon construction and is designed for surface-mount applications in an SQ package. The device operates with a maximum collector-emitter voltage of 60V and a collector-base voltage of 60V, while maintaining an emitter-base voltage rating of 5V. Each transistor within the dual configuration supports a maximum DC collector current of 50mA. The total power dissipation capability is rated at 350mW. The component is qualified for military standards and functions reliably across an operating temperature range from -65°C to +200°C.

Feature Summary

• Dual configuration integrating two PNP transistors within a single compact surface-mount package
• Qualified for high-reliability military and aerospace environments
• Silicon-based construction optimized for small-signal switching and amplification

Applications

• Military avionics systems requiring radiation-hardened or high-reliability discrete components
• Aerospace ground support equipment and satellite subsystems
• High-temperature industrial control circuits

Procurement Notes

Verify the specific ordering suffix and manufacturer lot traceability before procurement. Ensure that the received components match the JANSM2N3810U designation exactly, as variations may exist in packaging or qualification levels. Confirm compliance with relevant military specifications and check for any supply restrictions or long lead times associated with this specialized component class.

Selection Notes

Select the JANSM2N3810U when a dual PNP small-signal BJT is required for space-constrained surface-mount designs. Consider its 60V voltage ratings and 50mA current capacity against circuit demands. Evaluate the 350mW power dissipation limit relative to thermal management capabilities. Ensure compatibility with the SQ package footprint and verify that the extended temperature range meets operational environmental requirements.

Part Context

This component belongs to the 2N3810 series of dual small-signal transistors produced by Microchip Technology under the Microsemi brand. It represents a specialized variant designed for ruggedized applications, differing from commercial equivalents through enhanced reliability testing and material specifications suitable for demanding operational conditions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter equivalence if considering alternative dual BJT packages from other manufacturers.