JANSM2N5151L

Single Bipolar Transistors Overview

The JANSM2N5151L is a radiation-hardened PNP power silicon transistor manufactured by Microchip Technology. It is qualified per MIL-PRF-19500/545 and designed for high reliability in harsh environments. The device features an 80V collector-emitter voltage (VCEO) and a 2A continuous collector current (IC). It utilizes a metal TO-39 (TO-205AD) package with three pins, supporting through-hole mounting. The component operates within a temperature range of -65°C to +200°C and offers a total ionizing dose (TID) radiation hardness level of 30K rads (Si), ensuring stable performance in space and military applications.

Single Bipolar Transistors Feature Summary

• Radiation hardened design providing immunity to total ionizing dose effects up to 30K rads (Si)
• High thermal stability enabling operation at junction temperatures up to 200°C
• Robust metal can construction in a hermetically sealed TO-39 package for environmental protection

Single Bipolar Transistors Applications

• Spacecraft power management systems requiring radiation tolerance
• Military avionics and guidance control circuits
• High-reliability industrial power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific radiation hardness qualification level against project requirements, as the JANSM variant denotes a 30K rads (Si) tolerance. Confirm that the TO-39 metal package and lead configuration match the target PCB footprint. Ensure compliance with MIL-PRF-19500/545 standards is documented for aerospace or defense procurement audits. Check for any specific lot traceability requirements mandated by the end-use industry.

Single Bipolar Transistors Selection Notes

Select this component when high radiation tolerance is critical alongside moderate power handling capabilities. The PNP configuration suits high-side switching applications where positive logic control is required. Consider the TO-39 package constraints regarding board space and thermal dissipation needs compared to surface-mount alternatives. Verify that the 80V breakdown voltage aligns with the system's maximum supply rails under transient conditions.

Single Bipolar Transistors Part Context

This part belongs to Microchip's family of radiation-hardened bipolar junction transistors. It serves as the PNP counterpart to NPN variants like the JANSL2N5152L. These devices are engineered for long-term reliability in orbital and high-altitude environments where standard commercial components would fail due to single-event effects or cumulative radiation damage.

Single Bipolar Transistors FAQ

What is the specific radiation hardness level for the JANSM2N5151L?

The JANSM2N5151L is qualified for a Total Ionizing Dose (TID) radiation hardness level of 30K rads (Si).

Does the JANSM2N5151L support operation at elevated temperatures?

Yes, the device is rated for a maximum operating temperature of +200°C, making it suitable for high-thermal environments.

What package type does the JANSM2N5151L use?

It uses a metal TO-39 (JEDEC TO-205AD) package with three leads, designed for through-hole mounting.