JANSP2N3810L

Overview

The JANSP2N3810L is a dual PNP silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes a hermetically sealed TO-78 metal can package with six leads for through-hole mounting. The device features a maximum collector-emitter voltage of 60 V and a maximum collector-base voltage of 60 V, with an emitter-base voltage rating of 5 V. It supports a maximum DC collector current of 50 mA and a power dissipation of 350 mW. The component operates within a temperature range from -65°C to +200°C. It belongs to the 2N3810 series and is designed for high-reliability applications requiring radiation hardness.

Feature Summary

• Hermetically sealed metal can construction for environmental protection
• Radiation hardened design suitable for harsh environments
• Dual PNP configuration in a single package

Applications

• Military aerospace systems
• High reliability general purpose circuits
• Matched dual transistor applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm radiation hardness levels and screening requirements. Ensure the procurement channel provides traceability documentation required for space-grade components. Confirm that the package type matches the intended PCB footprint before finalizing orders.

Selection Notes

Select this component when radiation tolerance and long-term reliability are critical. Compare specifications such as hFE ranges and saturation voltages against circuit requirements. Verify that the thermal management strategy accommodates the specified power dissipation limits at maximum operating temperatures.

Part Context

This part is a specialized variant within the broader 2N3810 family produced by Microchip Technology. It shares core electrical characteristics with standard commercial versions but includes enhanced manufacturing processes for radiation resistance. The JAN prefix indicates military grade quality, while the SP suffix denotes space qualification.

Replacement Considerations

Direct substitutes include other radiation-hardened dual PNP transistors meeting MIL-PRF-19500 specifications. Verify pinout compatibility and thermal performance before substitution.