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The JANSP2N3810U is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a PNP configuration housed in a Dual RH Small-Signal Surface Mount Technology (SMT) package. The device supports a maximum DC collector current of 50 mA and a collector-emitter voltage (VCEO) of 60 V. Power dissipation is rated at 350 mW, with an operating temperature range spanning from -65 °C to +200 °C.
Verify the specific JANSP2N3810U suffix against official Microchip documentation to confirm radiation hardness and military qualification status. Ensure the selected variant matches the required surface mount package type and thermal specifications for the target environment before finalizing procurement orders.
Select this component when a dual PNP BJT is required for high-reliability applications. Confirm that the 60 V voltage rating and 50 mA current limits align with the circuit design requirements. Verify compatibility with the Dual RH SMT footprint during the PCB layout phase to ensure proper thermal management and mechanical stability.
This part belongs to the 2N3810 series of dual small-signal transistors produced by Microchip Technology. The JAN prefix indicates a specific military or space-grade qualification level distinct from commercial variants. It serves as a specialized alternative to standard through-hole versions like the TO-78-6 packaged 2N3810, offering surface mount convenience.
Direct substitutes include other qualified dual PNP BJTs in compatible SMT packages. Verify pinout compatibility and electrical parameters such as hFE gain and saturation voltage when considering cross-brand replacements.