JANSR2N2906AUB

Single Bipolar Transistors Overview

The JANSR2N2906AUB is a PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector current of 600 mA and a collector-emitter voltage rating of 60 V. The device has a power dissipation capacity of 500 mW and operates within a temperature range of -65°C to +200°C. It utilizes a ceramic surface-mount package designed for high-reliability applications.

Single Bipolar Transistors Feature Summary

• Radiation-hardened design suitable for space environments
• High-temperature operation capability up to 200°C
• Ceramic surface-mount construction for durability

Single Bipolar Transistors Applications

• Satellite communication systems
• Spacecraft avionics circuits
• Military aerospace electronics

Single Bipolar Transistors Procurement Notes

Verify the specific radiation hardness level and lot traceability documentation required for your mission profile. Confirm that the ceramic package variant meets your thermal management and mechanical mounting specifications. Ensure compliance with all relevant military or aerospace procurement standards before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance and extended temperature operation are critical requirements. Compare its 600 mA current handling against circuit demands. Verify that the 500 mW power dissipation aligns with your thermal design constraints and that the surface-mount form factor fits your PCB layout.

Single Bipolar Transistors Part Context

This part belongs to the JANS series of radiation-hardened semiconductors produced by Microchip. These components are engineered specifically for harsh environments where standard commercial parts would fail due to ionizing radiation exposure. The series ensures long-term reliability in orbital missions.

Single Bipolar Transistors Replacement Considerations

JANS2N2906AUB