JANSR2N2920

Overview

The JANSR2N2920 is a high-reliability dual NPN bipolar junction transistor array manufactured by Microchip Technology. It features a collector-emitter voltage rating of 60V and a power dissipation capacity of 350mW (0.35W). The device utilizes silicon technology and is housed in a TO-78-6 metal can package designed for through-hole mounting. This component is classified as a small-signal BJT intended for robust electronic applications.

Feature Summary

• Dual NPN configuration within a single metal can package
• High-reliability construction suitable for demanding environments
• Silicon-based small-signal bipolar junction transistor design

Applications

• Military aerospace electronics
• Defense communication systems
• Spacecraft instrumentation circuits

Procurement Notes

Verify the specific revision level and lot traceability documentation upon order confirmation. Ensure that the procurement channel provides valid certification for the JANS class reliability standards required for your specific application environment. Confirm package integrity and lead times with the authorized distributor prior to finalizing purchase orders.

Selection Notes

Select this component when a dual NPN small-signal transistor is required in a hermetically sealed metal package. The 60V rating and 350mW dissipation define its operational limits. Consider the TO-78-6 form factor for compatibility with existing through-hole layouts requiring high-reliability performance in harsh conditions.

Part Context

This part belongs to the JANS family of components, which are specifically qualified for space and military applications. It serves as a radiation-hardened or high-reliability alternative to standard commercial grade transistors. The dual NPN structure allows for compact circuit designs requiring matched or paired transistor characteristics in critical signal processing paths.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.