JANSR2N7593U3

Description：RH MOSFET _ U3
Series：-
Mfr：Microchip Technology
Package：Tray

SKU:01d601dc8629 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

JANSR2N7593U3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RH MOSFET _ U3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for JANSR2N7593U3

Description：RH MOSFET _ U3
Series：-
Mfr：Microchip Technology
Package：Tray
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：12.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：12V
Rds On (Max) @ Id, Vgs：210mOhm @ 7.8A, 12V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 12 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Military
Qualification：MIL-PRF-19500
Mounting Type：Surface Mount
Supplier Device Package：U3 (SMD-0.5)
Package / Case：3-SMD, No Lead

Single FETs, MOSFETs datasheet and documents for JANSR2N7593U3

JANSR2N7593U3

Single FETs, MOSFETs Overview

The JANSR2N7593U3 is a 250V N-channel radiation-hardened MOSFET utilizing Microchip's M6 technology. It features a maximum drain-source voltage of 250V, continuous drain current of 12.4A at 25°C, and a maximum on-resistance of 0.210Ω. The device withstands total ionizing doses exceeding 300Krad (Si) and includes single-event hardened design. Packaged in the hermetically sealed U3 surface-mount ceramic format, it operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Radiation hardening for extreme environments with high total dose tolerance
Single-event effect hardened structure
Hermetically sealed ceramic package
Low gate charge for fast switching

Single FETs, MOSFETs Applications

DC-DC Converters
Motor Control
Switch Mode Power Supplies

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required radiation screening level. Confirm the QPL part number designation aligns with procurement specifications. Ensure compatibility with existing thermal management solutions due to the ceramic package construction. Validate all electrical parameters against the latest datasheet revision prior to integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust performance in space or military environments exposed to significant radiation. Consider the U3 package dimensions for board layout constraints. Evaluate thermal resistance characteristics for heat dissipation requirements. Verify that the drive circuitry supports the specified gate threshold and charge requirements.

Single FETs, MOSFETs Part Context

This device belongs to Microchip's M6 technology family of radiation-hardened power MOSFETs. It shares the MRH25N12U3SR internal designation. The product line targets high-reliability sectors where standard commercial components would fail due to ionizing radiation exposure.