JANTX2N1613

Single Bipolar Transistors Overview

The JANTX2N1613 is a silicon NPN low-power transistor manufactured by Microchip Technology. It is designed for high-reliability applications, superseding the MIL-S-19500/181D specification and falling under the scope of MIL-PRF-19500/181F. The device utilizes a hermetically sealed TO-39 (TO-205AD) metal package to ensure environmental stability. Key electrical characteristics include a collector-emitter voltage rating of 40 V and a collector current capacity of 100 mA. The component supports a maximum power dissipation of 800 mW at an ambient temperature of 25°C. It features a DC current gain (hFE) range typically between 70 and 700, ensuring robust amplification capabilities across various operating conditions.

Single Bipolar Transistors Feature Summary

• Hermetically sealed construction in a TO-39 metal case for enhanced environmental protection
• Compliance with military reliability standards superseding MIL-S-19500/181D
• High DC current gain suitable for precision amplification tasks
• Silicon NPN epitaxial planar technology for stable performance

Single Bipolar Transistors Applications

• Military aerospace electronic systems requiring radiation-hardened or high-reliability components
• Precision analog signal amplification circuits
• Switching applications in harsh environmental conditions
• Spacecraft avionics and satellite communication subsystems

Single Bipolar Transistors Procurement Notes

Verify that the specific order includes the JANTX quality level designation, as this indicates adherence to stricter screening than standard JAN parts. Confirm the manufacturer source is authorized to supply devices compliant with MIL-PRF-19500/181F. Request lot traceability documentation and physical inspection reports to ensure the hermetic seal integrity meets military specifications. Validate that the delivered units match the superseded MIL-S-19500/181D requirements if legacy compatibility is critical for the design.

Single Bipolar Transistors Selection Notes

Select the JANTX2N1613 when application requirements demand a hermetically sealed NPN transistor with verified military-grade reliability. This component is appropriate for designs where standard commercial grade parts may fail due to thermal cycling or humidity exposure. Consider the TO-39 package constraints regarding board space and mounting hardware. Ensure the circuit design accounts for the 800 mW power dissipation limit and derating curves provided in the official datasheet for elevated temperature operations.

Single Bipolar Transistors Part Context

This component belongs to the family of silicon NPN transistors defined by the MIL-S-19500/181 series. It serves as a direct replacement for older military-specification devices while offering improved consistency through modern manufacturing processes. The JANTX variant represents a higher reliability tier within the JAN spectrum, often involving additional burn-in and screening procedures. Microchip Technology continues to support these legacy military parts to maintain supply chains for defense and aerospace platforms.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include 2N1613JANTX and 2N1613LJANTX. Verify pinout compatibility and exact electrical parameter tolerances before substitution. Ensure any alternative device also meets the hermetic sealing requirements of the TO-39 package.