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Product Detailed Parameters
- Description：TRANS 2NPN 60V 500MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：500mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Power - Max：600mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：Military
- Qualification：MIL-PRF-19500/270
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Overview
The JANTX2N2060 is a dual NPN bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 package for through-hole mounting. The device supports a maximum DC collector current of 500 mA with a power dissipation rating of 2.12 W. Voltage specifications include a collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 100 V, and an emitter-base voltage (VEBO) of 7 V. The saturation voltage is specified at 300 mV. Operating temperatures range from -65 C to +200 C. DC current gain ranges from a minimum of 25 at 10 uA/5 V to a maximum of 150 at 10 mA/5 V.
Feature Summary
- Dual NPN configuration within a single package
- High thermal stability supporting extended temperature ranges
- Silicon-based construction for reliability
Applications
- Military aerospace circuits
- Radiation-hardened systems
- High-reliability analog switching
Procurement Notes
Verify the specific manufacturer lot history, as historical data indicates performance variations between original producers like Motorola and Raytheon under overstress conditions. Confirm that the component meets current military qualification standards required for the intended application environment before finalizing procurement orders.
Selection Notes
Select this component when a dual NPN configuration is required in a TO-78-6 package. Ensure the design accommodates the 2.12 W power dissipation limit and the 60 V collector-emitter voltage rating. Verify that the operating temperature range aligns with the -65 C to +200 C specification for the target environment.
Part Context
This part belongs to the JANTX series of radiation-hardened dual transistors produced by Microchip Technology. It serves as a specialized alternative to older production runs from other manufacturers, addressing known weaknesses in power overstress resilience found in previous generations of similar devices.
Replacement Considerations
Direct substitutes may include Jantxv2N2060L/TR. Verify pinout compatibility and electrical parameter alignment before substitution.
