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The JANTX2N2060L/TR is a dual NPN silicon bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-78-6 metal can package designed for through-hole mounting. The device supports a maximum DC collector current of 500 mA and operates with a collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 100 V, and an emitter-base voltage (VEBO) of 7 V. Power dissipation is rated at 2.12 W. The component functions within a temperature range of -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 25 at 10 µA/5 V to a maximum of 150 at 10 mA/5 V, with a collector-emitter saturation voltage of 300 mV.
Verify the specific suffix against official Microchip documentation to confirm exact electrical tolerances and lot traceability requirements. Ensure the procurement channel provides valid military-grade certification papers. Confirm that the TO-78-6 package dimensions match the target board layout specifications before finalizing orders.
Select this component when a dual NPN topology is required in a robust metal can package. The wide operating temperature range up to +200°C makes it suitable for extreme environments. Verify that the 500 mA current rating and 60 V breakdown voltage align with the circuit design constraints.
This part belongs to the JANTX series of dual bipolar transistors produced by Microchip Technology. The JANTX designation typically indicates enhanced screening and reliability standards compared to commercial equivalents. The device is categorized under Bipolar Junction Transistors (BJTs) within the broader semiconductor portfolio.
Consult official Microchip cross-reference documents for verified substitutes. Generic replacements may not meet the specific JANTX screening or package requirements.