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The JANTX2N2920L is a unitized dual NPN silicon transistor manufactured by Microchip Technology. It complies with the MIL-PRF-19500/355 specification, superseding MIL-S-19500/355D. The device features two independent NPN transistors within a single hermetically sealed package. Key electrical parameters include a collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 70 V. The emitter-base voltage (VEBO) is rated at 6 V. The maximum continuous collector current is 30 mA, with a power dissipation capability of 350 mW. The component operates within a temperature range of -65°C to +200°C.
Verify the specific suffix against the manufacturer's current datasheet to confirm exact qualification level and testing standards. Ensure the ordering part number matches the required MIL-PRF-19500/355 grade. Confirm package type and pinout compatibility with the target design before procurement.
Select this component when a dual NPN configuration is required in a hermetically sealed package for space-constrained or high-reliability designs. Verify that the 30 mA collector current and 350 mW power dissipation meet the circuit requirements. Check thermal management needs given the wide operating temperature range up to 200°C.
This part belongs to the 2N2920 family of dual NPN transistors. It is related to variants such as JANTX2N2920U and JANTX2N2919. The L suffix typically denotes a specific lead form or package variation within the military-grade lineup. All variants share the core electrical characteristics defined by the MIL-PRF-19500/355 standard.
Direct replacements include other JANTX2N2920 variants from Microchip or Semelab, provided they meet the same MIL-PRF-19500/355 specification. Verify package dimensions and pinout compatibility before substitution.