Single Bipolar Transistors JANTX2N3439 product image

JANTX2N3439

$9.69
  • Description:TRANS NPN 350V 1A TO-39
  • Series:-

SKU:c6ecfbaf275c Category: Brand:

  
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JANTX2N3439 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 350V 1A TO-39. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTX2N3439

  • Description:TRANS NPN 350V 1A TO-39
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):350 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max):2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 20mA, 10V
  • Power - Max:800 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39
  • Grade:Military
  • Qualification:MIL-PRF-19500/368

Single Bipolar Transistors datasheet and documents for JANTX2N3439

JANTX2N3439

Single Bipolar Transistors Overview

The JANTX2N3439 is a silicon NPN power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for low-power applications and complies with the MIL-S-19500/368C specification. The device features a collector-emitter voltage rating of 350V and a continuous collector current capacity of 1A. Thermal performance is characterized by a maximum power dissipation of 800mW. These electrical parameters define its operational limits within electronic circuits requiring high-voltage switching or amplification capabilities.

Single Bipolar Transistors Feature Summary

  • High voltage blocking capability suitable for demanding circuit environments
  • Compliance with military reliability standards for ruggedized applications
  • Silicon construction ensuring stable semiconductor performance

Single Bipolar Transistors Applications

  • Military-grade electronic systems
  • Ruggedized power switching circuits
  • High-voltage amplifier stages

Single Bipolar Transistors Procurement Notes

Verify that the component explicitly bears the JANTX suffix to confirm it meets the specific quality and screening requirements defined in the MIL-S-19500/368C standard. Ensure the manufacturer documentation confirms the part is a silicon NPN BJT. Cross-reference the manufacturer's latest datasheet to validate current production status and any potential product change notifications affecting specifications or packaging.

Single Bipolar Transistors Selection Notes

Select this component when a design requires an NPN transistor capable of handling 350V collector-emitter voltage and 1A current with low power dissipation constraints. The JANTX designation indicates enhanced screening compared to commercial grades, making it appropriate for aerospace or defense projects where long-term reliability under stress is critical. Verify package compatibility during integration.

Single Bipolar Transistors Part Context

This device belongs to the 2N3439 family of NPN silicon transistors produced under military specifications. The JANTX variant represents a screened subset intended for higher reliability applications than standard commercial equivalents. It shares core electrical characteristics with other members of the series but adheres to stricter manufacturing controls outlined in the relevant military standard documents.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include JAN2N3439 and JANS2N3439, which share the same base electrical profile but differ in screening levels. Commercial equivalents like 2N3439 may match electrical ratings but lack the required military qualification data.

JANTX2N3439JANTX2N3439
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