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JANTX2N3507A is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 50V 3A TO39. Review the specifications below when checking this part for your BOM.
The JANTX2N3507A is a silicon NPN power bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 3 A. The device supports a power dissipation of 1 W and operates within a temperature range of -65 °C to +200 °C. Packaged in a TO-39 metal can, it is designed for through-hole mounting and complies with MIL-PRF-19500/354 standards.
Verify the specific revision level against the latest Microchip datasheet to ensure compliance with current manufacturing standards. Confirm that the TO-39 package dimensions match your PCB footprint requirements. Check for any recent Product Change Notifications (PCNs) regarding material composition or assembly site changes before finalizing procurement orders.
Select this component when high current capacity and hermetic sealing are required for harsh environments. Ensure the circuit design accommodates the 1 W power dissipation limit and provides adequate heat sinking. Verify that the 50 V breakdown voltage exceeds the maximum expected peak voltages in the application to prevent device failure.
This part belongs to the JANTX series of radiation-hardened and military-specification transistors from Microchip. It serves as a robust alternative to commercial-grade BJTs in applications demanding long-term reliability and stability under extreme thermal conditions.
Direct substitutes include the standard 2N3507 for non-military applications and the JANS2N3507 for higher radiation tolerance levels. Verify pinout compatibility and thermal resistance characteristics when substituting.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.