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JANTX2N3636L is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 175V 1A TO-5AA. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for JANTX2N3636L
- Description：TRANS PNP 175V 1A TO-5AA
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：175 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 50mA, 10V
- Power - Max：1 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AA, TO-5-3 Metal Can
- Supplier Device Package：TO-5AA
- Grade：Military
- Qualification：MIL-PRF-19500/357
Single Bipolar Transistors datasheet and documents for JANTX2N3636L
Single Bipolar Transistors Overview
The JANTX2N3636L is a PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 175 V and a continuous collector current of 1 A. The device operates within a temperature range of -65°C to +200°C with a power dissipation rating of 5 W in a TO-5 case style. It is qualified under MIL-PRF-19500/357 standards, ensuring reliability for demanding environments.
Single Bipolar Transistors Feature Summary
- Qualified to MIL-PRF-19500/357 specifications for military-grade reliability
- High thermal stability with an extended operating temperature range up to +200°C
- Robust high-voltage capability suitable for sensitive signal processing applications
Single Bipolar Transistors Applications
- Military aerospace electronic systems
- High-reliability industrial control circuits
- Harsh environment signal amplification
Single Bipolar Transistors Procurement Notes
Verify the specific suffix and lot traceability against the latest Microchip datasheet to ensure compliance with MIL-PRF-19500/357 requirements. Confirm package integrity and pinout compatibility before integration into existing designs.
Single Bipolar Transistors Selection Notes
Select this component when high voltage isolation and extreme temperature resilience are required. Ensure the circuit design accommodates the 5 W power dissipation limit and the specific hFE characteristics defined in the official electrical tables.
Single Bipolar Transistors Part Context
This part belongs to the 2N3636 series of low-power PNP transistors. It shares the same electrical profile as the JAN and JANTXV variants but represents the JANTX quality level. It is functionally interchangeable with other industry-standard 2N3636 devices meeting similar military specifications.
Single Bipolar Transistors Replacement Considerations
Direct substitutes include JAN2N3636L and JANTXV2N3636L from Microchip. Verify that alternative sources meet the exact MIL-PRF-19500/357 qualification criteria.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
